Transparent, unreflective films of Ga2O3 have been produced from [Ga(NMe2)3]2 and ROH (R = donor-functionalised ligand) by AACVD on glass. Due to the influence of the solvent on the deposition, AACVD can lead to unique or different morphologies that could potentially result in improved properties. The in situ reaction of the reagents eliminates the need for the synthesis, isolation and purification of a single-source metal alkoxide precursor and represents a facile method for the formation of these films, without the necessity of oxygen carrier gas. Thin films are characterised by SEM/EDAX, WDX, XPS, powder XRD, UV-vis, FTIR and Raman spectroscopy.