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BiFeO3 Multiferroic Devices
Electrical control of ferromagnetism in insulators could provide a route to novel low-energy electronics. Despite challenges in the electrical control of ferromagnets, significant progress has been made in the electrical control of antiferromagnetism in so-called multiferroics, and it has been demonstrated that in certain cases antiferromagnetism can be coupled to ferromagnetism in thin film heterostructures. BiFeO3 is arguably the most studied multiferroic material today, owing to its enormous electric polarisation and strong magneto-electric coupling active at room-temperature. We aim to demonstrate how one can controllably produce a fully deterministic magneto-electric switching memory bit based on BiFeO3 thin films. N. Waterfield Price et al., Physical Review Letters 117, 177601 (2016) W. Saenrang et al., Nature Comm. 8, 1583 (2017) N. Waterfield Price et al., Physical Review Applied 8, 014033 (2017)
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