Since the gate length of today’s silicon MOS devices are as small as 150nm, addressing these issues necessarily requires expertise in all aspects of Nanotechnology – from nanofabrication using photon, ion and electron beams to self-assembly of organic molecular monolayers, to the coherent quantum properties of nanoclusters. The EMD plays a key role in the London Centre for Nanotechnology, a joint UCL – Imperial College collaboration with over £19M of infrastructure funding. This has led to collaboration with scientists from an increasingly diverse range of disciplines, including not only physicists and materials scientists, but also clinical medics and biopharmacologists.

EMD has a flourishing & diverse portfolio of areas technological excellence including:

• Ultra-Violet Processing of Ultrathin Films, in particular silicon dioxide and also high k layers, such as tantalum and hafnium oxides - materials for use as gate oxides in future Si MOSFET generations.
• Josephson Junctions: High-T superconductors for ultra-sensitive magnetic/electric field sensors
• Diamond Electronics, especially diamond-like carbon for use in high temperature environments and ultra-violet electronics applications where the higher bandgap of diamond is required.
• Dynamical Control Systems for process control in the biopharmaceuticals and other industries.
• Silicon Vacuum Electronics for sensor and field-emission display technologies.
• Si Nanoclusters: Exploitation of quantum effects for prototype quantum computers.