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Publication Detail
1.3μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Conference Proceeding
  • Authors:
    Chen S, Tang M, Wu J, Jiang Q, Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Liu H
  • Publication date:
    01/01/2014
  • Pagination:
    88, 89
  • Journal:
    Conference Digest - IEEE International Semiconductor Laser Conference
  • Status:
    Published
  • Print ISSN:
    0899-9406
Abstract
© 2014 IEEE. We report on the operation of electrically pumped 1.3μm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ∼80mW.
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Dept of Electronic & Electrical Eng
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