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Publication Detail
Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric,
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Esmaeili-Rad MR, Li F, Sazonov A, Nathan A
  • Publication date:
    2007
  • Journal:
    Journal of Applied Physics
  • Volume:
    102
  • Print ISSN:
    0021-8979
  • Notes:
    064512-1-7
Abstract
No abstract found
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