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Publication Detail
High performance hydrogenated amorphous silicon n-i-p photo-diodes on glass and plastic substrates by low-temperature fabrication process
  • Publication Type:
    Conference
  • Authors:
    Kim KH, Vygranenko Y, Bedzyk M, Chang JH, Chuang TC, Striakhilev D, Nathan A, Heiler G, Tredwell T
  • Publisher:
    Materials Research Society
  • Publication date:
    2007
  • Place of publication:
    Warrendale, US
  • Published proceedings:
    Amorphous and polycrystalline thin-film silicon science and technology 2007: Symposium held April 9-13, 2007, San Francisco, California, U.S.A.
  • Volume:
    989
  • Issue:
    0989-A19-05
  • Series:
    Materials Research Society symposia proceedings
  • Editors:
    Chu V,Miyazaki S,Nathan A,Yang J,Zan HW
  • ISBN-13:
    9781558999497
  • Status:
    Published
  • Language:
    English
Abstract
We report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ∼1.73 eV and low density of states (of the order 10 15 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ∼70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ∼10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.
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