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Publication Detail
Modeling and characterization of the hydrogenated amorphous silicon metal insulator semiconductor photosensors for digital radiography
  • Publication Type:
  • Authors:
    Safavian N, Vygranenko Y, Chang J, Kim KH, Lai J, Striakhilev D, Nathan A, Heiler G, Tredwell T, Fernandes M
  • Publisher:
    Materials Research Society
  • Publication date:
  • Place of publication:
    Warrendale, US
  • Pagination:
    299, 304
  • Published proceedings:
    Amorphous and polycrystalline thin-film silicon science and technology - 2007: symposium held April 9-13, 2007, San Francisco, California, U.S.A.
  • Volume:
  • Series:
    Materials Research Society symposia proceedings
  • Editors:
    Chu V,Miyazaki S,Nathan A,Yang J
  • ISBN-13:
  • Status:
Because of the inherent desired material and technological attributes such as low temperature deposition and high uniformity over large area, the amorphous silicon (a-Si:H) technology has been extended to digital X-ray diagnostic imaging applications. This paper reports on design, fabrication, and characterization of a MIS-type photosensor that is fully process-compatible with the active matrix a-Si:H TFT backplane. We discuss the device operating principles, along with measurement results of the transient dark current, linearity and spectral response. © 2007 Materials Research Society.
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