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Publication Detail
Reliability of silicon nitride gate dielectric in vertical thin-film transistors
  • Publication Type:
    Conference
  • Authors:
    Moradi M, Striakhilev D, Chan I, Nathan A, Cho N-I, Nam HG
  • Publisher:
    Materials Research Society
  • Publication date:
    2007
  • Place of publication:
    Warrendale, US
  • Pagination:
    185, 190
  • Published proceedings:
    Amorphous and polycrystalline thin-film silicon science and technology - 2007: Symposium held April 9-13, 2007, San Francisco, California, U.S.A.
  • Volume:
    989
  • Series:
    MRS Proceedings
  • Editors:
    Chu V,Miyazaki S,Nathan A,Yang J,Zan HW
  • ISBN-13:
    9781558999497
  • Status:
    Published
  • Language:
    English
Abstract
This paper presents results of a systematic investigation of the impact of film thickness on leakage current and electrical breakdown of plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx). We consider SiNx films of various thicknesses, in the range 50 to 300 nm, deposited on both planar and vertical sidewalls in resemblance to the structural topology of the vertical thin film transistor (VTFT). The electrical breakdown strength for 150-300 nm thick films was approximately 7 MV/cm, while the value dropped to ~3 MV/cm for 50 nm thick films deposited under the same process conditions. In all cases, failure is inevitably accompanied by an increase in pinhole density. The results show that the reliability and leakage current of the gate dielectric in vertical thin film transistors depends on the step coverage of the SiNx on the vertical sidewall.
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