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Publication Detail
Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C
Abstract
A silicon-based InAs/GaAs quantum dot laser that lases up to 111°C, with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature, has been achieved.
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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