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Publication Detail
Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD)
  • Publication Type:
    Journal article
  • Authors:
    Ling M, Blackman C
  • Publication date:
    07/2015
  • Pagination:
    869, 877
  • Journal:
    Physica Status Solidi (C)
  • Volume:
    12
  • Issue:
    7
  • Status:
    Published
  • Print ISSN:
    1610-1642
  • Language:
    English
  • Keywords:
    growth mechanism, aerosol assisted chemical vapour deposition (AACVD), nanorod, tungsten oxide
  • Notes:
    This is the peer reviewed version of the following article: Ling, M; Blackman, C; (2015) Growth mechanism of planar or nanorod structured tungsten oxide thin films deposited via aerosol assisted chemical vapour deposition (AACVD). Physica Status Solidi (C), 12 (7) pp. 869-877, which has been published in final form at: http://dx.doi.org/10.1002/pssc.201510047. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving (http://olabout.wiley.com/WileyCDA/Section/id-820227.html#terms).
Abstract
Aerosol assisted chemical vapour deposition (AACVD) is used to deposit tungsten oxide thin films from tungsten hexacarbonyl (W(CO)6) at 339 to 358 °C on quartz substrate. The morphologies of as-deposited thin films, which are comprised of two phases (W25O73 and W17O47), vary from planar to nanorod (NR) structures as the distance from the inlet towards the outlet of the reactor is traversed. This is related to variation of the actual temperature on the substrate surface (ΔT = 19 °C), which result in a change in growth mode due to competition between growth rate (perpendicular to substrate) and nucleation rate (parallel to substrate). When the ratio of perpendicular growth rate to growth rate contributed by nucleation is higher than 7.1, the as-deposited tungsten oxide thin film forms as NR. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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