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Publication Detail
Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C
  • Publication Type:
    Conference
  • Authors:
    Chen S, Mingchu Tang , Qi Jiang , Jiang Wu , Dorogan VG, Benamara M, Mazur YI, Salamo GJ, Seeds A, Huiyun Liu
  • Publication date:
    15/05/2017
  • Pagination:
    1, 2
  • Published proceedings:
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Name of conference:
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Keywords:
    III-V semiconductors, current density, elemental semiconductors, gallium arsenide, indium compounds, integrated optics, optical filters, quantum dot lasers, semiconductor superlattices, silicon, InAs-GaAs, Si, Si substrate, dislocation filter layers, electrically pumped quantum dot laser, output power, room temperature, strained-layer superlattices, temperature 293 K to 298 K, threshold current density, wavelength 1.3 mum, Current density, Gallium arsenide, Indium compounds, Lasers, Power generation, Silicon, Substrates
Abstract
No abstract found
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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