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Publication Detail
Monolithically grown superluminescent diodes on germanium and silicon substrates
  • Publication Type:
  • Authors:
    Jiang Q, Chen S, Tang M, Wu J, Seeds A, Huiyun
  • Publication date:
  • Published proceedings:
    Conference on Lasers and Electro-Optics Europe - Technical Digest
  • Volume:
  • ISBN-13:
  • Status:
© 2015 OSA. We demonstrate the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on both Ge and Si substrates by molecular beam epitaxy. The QD SLDs on Ge substrates exhibit a 3 dB emission bandwidth of ∼60 nm with output power of 27 mW at room temperature, and operates up to 100°C. We also report the first QD SLD monolithically grown on a Si substrate. A two-section ridge structure has been used to achieve a close-to-Gaussian emission spectrum of 114 nm centered at ∼1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature.
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