UCL  IRIS
Institutional Research Information Service
UCL Logo
Please report any queries concerning the funding data grouped in the sections named "Externally Awarded" or "Internally Disbursed" (shown on the profile page) to your Research Finance Administrator. Your can find your Research Finance Administrator at http://www.ucl.ac.uk/finance/research/post_award/post_award_contacts.php by entering your department
Please report any queries concerning the student data shown on the profile page to:

Email: portico-services@ucl.ac.uk

Help Desk: http://www.ucl.ac.uk/ras/portico/helpdesk
Publication Detail
Monolithically grown superluminescent diodes on germanium and silicon substrates
  • Publication Type:
    Conference
  • Authors:
    Jiang Q, Chen S, Tang M, Wu J, Seeds A, Huiyun
  • Publication date:
    10/08/2015
  • Published proceedings:
    Conference on Lasers and Electro-Optics Europe - Technical Digest
  • Volume:
    2015-August
  • ISBN-13:
    9781557529688
  • Status:
    Published
Abstract
© 2015 OSA. We demonstrate the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on both Ge and Si substrates by molecular beam epitaxy. The QD SLDs on Ge substrates exhibit a 3 dB emission bandwidth of ∼60 nm with output power of 27 mW at room temperature, and operates up to 100 ° C. We also report the first QD SLD monolithically grown on a Si substrate. A two-section ridge structure has been used to achieve a close-to-Gaussian emission spectrum of 114 nm centered at ∼1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature.
Publication data is maintained in RPS. Visit https://rps.ucl.ac.uk
 More search options
UCL Researchers
Author
Dept of Electronic & Electrical Eng
Author
Dept of Electronic & Electrical Eng
Author
Dept of Electronic & Electrical Eng
University College London - Gower Street - London - WC1E 6BT Tel:+44 (0)20 7679 2000

© UCL 1999–2011

Search by