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Publication Detail
Advanced Physical Modeling of SiOx Resistive Random Access Memories
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Publication Type:Conference presentation
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Publication Sub Type:Presentation
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Authors:Sadi T, Wang L, Gao D, Mehonic A, Montesi L, Buckwell M, Kenyon AJ, Shluger A, Asenov A
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Date:06/09/2016
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Status:Published
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Name of Conference:21st International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2016)
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Conference place:Nuremberg, Germany
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Conference start date:05/09/2016
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Conference finish date:08/09/2016
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Full Text URL:
Abstract
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