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Publication Detail
An Impedance Spectroscopic Investigation of the Electrical Properties of δ-doped Diamond Structures
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Tumilty N, Welch J, Lang R, Wort C, Balmer R, Jackman , R B
  • Publication date:
    2009
  • Pagination:
    103707, ?
  • Journal:
    Journal of Applied Physics
  • Volume:
    106
  • Print ISSN:
    0021-8979
  • Keywords:
    Diamond, nanotechnology, delta-doping, carrier transport
Abstract
Impedance spectroscopy has been used to investigate the conductivity displayed by diamond doped with boron in an intrinsic-δ-layer-intrinsic multilayer system with differing δ-layer thicknesses. Carrier transport within 5nm δ-layer structures is complex, being dominated by conduction in the interfacial regions between the δ-layer and the intrinsic regions, as well as conduction within the δ-layer itself. In the case of 3.2nm thick δ-layers the situation appears improved with uncapped samples supporting only two conduction paths, one of which may be associated with transport outside of the δ-layer, the other low transport within the δ-layer complex diamond structures. Introduction of the capping layer creates a third conduction path associated unwanted boron in the capping layer-δ-layer interface.
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