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Publication Detail
A novel route for the inclusion of metal dopants in silicon
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Gardener JA, Liaw I, Aeppli G, Boyd IW, Chater RJ, Jones TS, McPhail DS, Sankar G, Stoneham AM, Sikora M, Thornton G, Heutz S
  • Publisher:
    IOP PUBLISHING LTD
  • Publication date:
    15/01/2010
  • Journal:
    NANOTECHNOLOGY
  • Volume:
    21
  • Issue:
    2
  • Article number:
    025304
  • Print ISSN:
    0957-4484
  • Language:
    EN
  • Keywords:
    PHTHALOCYANINE THIN-FILMS, ION MASS-SPECTROMETRY, MANGANESE, OXYGEN, GAAS, LAMP, MN, SI
  • Addresses:
    Gardener, JA
    Harvard Univ
    Dept Phys
    Cambridge
    MA
    02138
    USA

    UCL
    London Ctr Nanotechnol
    London
    WC1E 6BT
    England

    UCL
    London Ctr Nanotechnol
    London
    WC1E 6BT
    England

    Univ London Imperial Coll Sci Technol & Med
    London Ctr Nanotechnol
    London
    SW7 2AZ
    England
Abstract
We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.
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