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Publication Detail
Recommended Methods to Study Resistive Switching Devices
  • Publication Type:
    Journal article
  • Publication Sub Type:
  • Authors:
    Lanza M, Wong H-SP, Pop E, Ielmini D, Strukov D, Regan BC, Larcher L, Villena MA, Yang JJ, Goux L, Belmonte A, Yang Y, Puglisi FM, Kang J, Magyari-Köpe B, Yalon E, Kenyon AJ, Buckwell M, Mehonic A, Shluger A, Li H, Hou T-H, Hudec B, Akinwande D, Ge R, Ambrogio S, Roldan JB, Miranda E, Suñe J, Pey KL, Wu X, Raghavan N, Wu E, Lu WD, Navarro G, Zhang W, Wu H, Li R, Holleitner A, Wurstbauer U, Lemme MC, Liu M, Long S, Liu Q, Lv H, Padovani A, Pavan P, Valov I, Jing X, Han T, Zhu K, Chen S, Hui F, Shi Y
  • Publisher:
    John Wiley & Sons, Inc.
  • Publication date:
  • Journal:
    Advanced Electronic Materials
  • Status:
    Published online
  • Language:
  • Keywords:
    electrical characterization, electronic synapses, nanofabrication, resistive random‐access memories, resistive switching
Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.
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