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Publication Detail
Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001).
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Zhou T, Tang M, Xiang G, Xiang B, Hark S, Martin M, Baron T, Pan S, Park J-S, Liu Z, Chen S, Zhang Z, Liu H
  • Publication date:
    20/02/2020
  • Pagination:
    977
  • Journal:
    Nat Commun
  • Volume:
    11
  • Issue:
    1
  • Status:
    Published online
  • Country:
    England
  • PII:
    10.1038/s41467-020-14736-9
  • Language:
    eng
Abstract
Semiconductor III-V photonic crystal (PC) laser is regarded as a promising ultra-compact light source with unique advantages of ultralow energy consumption and small footprint for the next generation of Si-based on-chip optical interconnects. However, the significant material dissimilarities between III-V materials and Si are the fundamental roadblock for conventional monolithic III-V-on-silicon integration technology. Here, we demonstrate ultrasmall III-V PC membrane lasers monolithically grown on CMOS-compatible on-axis Si (001) substrates by using III-V quantum dots. The optically pumped InAs/GaAs quantum-dot PC lasers exhibit single-mode operation with an ultra-low threshold of ~0.6 μW and a large spontaneous emission coupling efficiency up to 18% under continuous-wave condition at room temperature. This work establishes a new route to form the basis of future monolithic light sources for high-density optical interconnects in future large-scale silicon electronic and photonic integrated circuits.
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