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Publication Detail
Roadmap of 1300-nm InAs/GaAs quantum dot laser grown on silicon for silicon photonics
  • Publication Type:
    Conference
  • Authors:
    Liu Z, Liao M, Hantschmann C, Wang Y, Zhou T, Tang M, Park JS, Zhang Z, Chen S, Seeds A, Penty R, White I, Yu S, Liu H
  • Publisher:
    OSA
  • Publication date:
    14/11/2019
  • Published proceedings:
    Optics InfoBase Conference Papers
  • Volume:
    Part F151-OEDI 2019
  • ISBN-13:
    9781557528209
  • Status:
    Published
  • Name of conference:
    Optoelectronic Devices and Integration 2019
  • Conference place:
    Wuhan China
  • Conference start date:
    11/11/2019
  • Conference finish date:
    14/11/2019
Abstract
© 2019 The Author(s). Quantum dot (QD) lasers monolithically grown on silicon substrates has been considered as a promising approach for on-chip light source in Si photonics. In this paper, the recent progress in Si-based InAs/GaAs QD lasers at 1300nm wavelength is demonstrated.
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