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Publication Detail
Complete Strain Mapping of Nanosheets of Tantalum Disulfide
  • Publication Type:
    Journal article
  • Publication Sub Type:
  • Authors:
    Cao Y, Assefa T, Banerjee S, Wieteska A, Zi-Ren Wang D, Pasupathy A, Tong X, Liu Y, Lu W, Sun YP, He Y, Huang X, Yan H, Chu YS, Billinge SJL, Robinson IK
  • Publication date:
  • Pagination:
    43173, 43179
  • Journal:
    ACS applied materials & interfaces
  • Volume:
  • Issue:
  • Status:
Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying crystal strain is a prerequisite to correlating it with the performance of the device and calls for high resolution but spatially resolved rapid characterization methods. Here, we show that using fly-scan nano X-ray diffraction, we can accomplish a tensile strain sensitivity below 0.001% with a spatial resolution of better than 80 nm over a spatial extent of 100 μm on quasi-2D flakes of 1T-TaS2. Coherent diffraction patterns were collected from a ∼100 nm thick sheet of 1T-TaS2 by scanning a 12 keV focused X-ray beam across and rotating the sample. We demonstrate that the strain distribution around micron- and submicron-sized "bubbles" that are present in the sample may be reconstructed from these images. The experiments use state-of-the-art synchrotron instrumentation and will allow rapid and nonintrusive strain mapping of thin-film samples and electronic devices based on quasi-2D materials.
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