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Publication Detail
Single-mode photonic crystal nanobeam lasers monolithically grown on Si for dense integration
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Zhou T, Tang M, Li H, Zhang Z, Cui Y, Park JS, Martin M, Baron T, Chen S, Liu H, Zhang Z
  • Publication date:
    2022
  • Journal:
    IEEE Journal of Selected Topics in Quantum Electronics
  • Status:
    Published
  • Print ISSN:
    1077-260X
Abstract
Ultra-compact III-V nanolasers monolithically integrated on Si with ultra-low energy consumption and small modal volume have been emerged as one of the most promising candidates to achieve Si on-chip light sources. However, the significant material dissimilarities between III-V and Si fundamentally limit the performance of Si-based III-V nanolasers. In this work, we report 1.3 m InAs/GaAs quantum-dot photonic-crystal (PhC) nanobeam lasers directly grown on complementary metal-oxide-semiconductor compatible on-axis Si (001) substrates. The continuous-wave optically pumped PhC nanobeam lasers exhibited a single-mode operation, with an ultra-low lasing threshold of ~ 0.8 W at room temperature. In addition, a nanoscale physical volume of ~ 8 0.53 0.36 m3 (~ 25 (n1)3) was realized through a small number of air-holes in PhC nanobeam laser. The promising characteristics of the PhC nanobeam lasers with small footprint and ultra-low energy consumption show their advanced potential towards densely integrated Si photonic integrated circuits.
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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