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Publication Detail
A thermally erasable silicon oxide layer for molecular beam epitaxy
  • Publication Type:
    Journal article
  • Authors:
    Hou Y, Jia H, Tang M, Mosberg AB, Ramasse Q, Skandalos I, Noori YJ, Yang J, Liu H, Seeds A, Gardes F
  • Publisher:
    IOP Publishing
  • Publication date:
    20/10/2022
  • Journal:
    Journal of Physics D: Applied Physics
  • Volume:
    55
  • Issue:
    42
  • Article number:
    424004
  • Status:
    Published
  • Print ISSN:
    0022-3727
  • Language:
    English
  • Notes:
    Original Content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Abstract
We present a systematic study of the oxidation and deoxidation behaviours of several kinds of ultrathin silicon oxide layers frequently used in silicon technology, which in this work serve as surface protecting layers for molecular beam epitaxy (MBE). With various haracterization techniques, we demonstrate that a chemically grown silicon oxide layer is the most promising candidate for ubsequent removal in an ultrahigh vacuum chamber at a temperature of 1000oC, without making use of a reducingagent. As a demonstration, tensile-strained Ge(100) is epitaxially grown on the deoxidised wafer with an atomically flat surface and a low threading dislocation density of 3.33 × 108 /cm2. Our findings reveal that the ultra-thin oxide layer grown using a chemical approach is able to protect Si surfaces for subsequent MBE growth of Ge. This approach is promising for the growth of III/V-on-Si (using Ge as a buffer) and all group-IV related epitaxy for integration on the Si photonics platforms.
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