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Publication Detail
Oxygen Vacancy Origin of the Surface Band-Gap State of TiO2(110)
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Yim CM, Pang CL, Thornton G
  • Publisher:
    AMER PHYSICAL SOC
  • Publication date:
    22/01/2010
  • Journal:
    PHYS REV LETT
  • Volume:
    104
  • Issue:
    3
  • Print ISSN:
    0031-9007
  • Language:
    EN
  • Keywords:
    RUTILE TIO2(110), OH GROUPS, TIO2, DISSOCIATION, O-2, WATER, REACTIVITY, DEFECTS, SITES, H2O
  • Addresses:
    Yim, CM
    UCL
    London Ctr Nanotechnol
    London
    WC1H 0AH
    England

    UCL
    Dept Chem
    London
    WC1H 0AH
    England
Abstract
Scanning tunneling microscopy and photoemission spectroscopy have been used to determine the origin of the band-gap state in rutile TiO2(110). This state has long been attributed to oxygen vacancies (O-b vac). However, recently an alternative origin has been suggested, namely, subsurface interstitial Ti species. Here, we use electron bombardment to vary the O-b vac density while monitoring the band-gap state with photoemission spectroscopy. Our results show that O-b vac make the dominant contribution to the photoemission peak and that its magnitude is directly proportional to the O-b vac density.
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