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Publication Detail
The origin of the 0.78 eV luminescence band in strained layer SiGe/Si
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Publication Type:Conference
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Authors:Kenyon AJ, Steinman EA, Pitt CW, Hole DE, Vdovin VI
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Publisher:MATERIALS RESEARCH SOCIETY
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Publication date:01/01/2003
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Pagination:31, 36
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Published proceedings:OPTOELECTRONICS OF GROUP-IV-BASED MATERIALS
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Volume:770
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Series:Materials Research Society Symposium Proceedings
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Editors:Gregorkiewicz T,Elliman RG,Fauchet PM,Hutchby JA
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ISBN-10:1-55899-707-5
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Status:Published
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Name of conference:Symposium on Optoelectronics of Group-IV-Based Materials held at the 2003 MRS Spring Meeting
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Conference place:SAN FRANCISCO, CA
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Conference start date:21/04/2003
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Conference finish date:24/04/2003
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Print ISSN:0272-9172
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Language:English
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Keywords:Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Optics, Materials Science, DISLOCATIONS, SILICON, HETEROSTRUCTURES
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Full Text URL:
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Addresses:UCL
Dept Elect & Elect Engn
London
England
WC1E 7JE
Abstract
No abstract found
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