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Publication Detail
Nanodiamond-gated diamond field-effect transistor for chemical sensing using hydrogen-induced transfer doping for channel formation
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Ahmad RK, Parada AC, Tumilty N, Jackman RB
  • Publisher:
    AMER INST PHYSICS
  • Publication date:
    15/11/2010
  • Journal:
    APPL PHYS LETT
  • Volume:
    97
  • Issue:
    20
  • Article number:
    203503
  • Print ISSN:
    0003-6951
  • Language:
    EN
  • Keywords:
    POLYCRYSTALLINE DIAMOND, NANOCRYSTALLINE DIAMOND, SURFACE CONDUCTIVITY, PERFORMANCE, FABRICATION, SENSORS, LENGTH, FETS
  • Addresses:
    Jackman, RB
    UCL
    Dept Elect & Elect Engn
    London
    WC1H 0AH
    England

    UCL
    London Ctr Nanotechnol
    London
    WC1H 0AH
    England
Abstract
A method for attaching nanodiamonds (NDs) to H-terminated diamond devices displaying surface conductivity, configured as an ion-sensitive field-effect transistor and resistor sensor, is demonstrated. From Hall effect measurements, there was minimal sign of degradation of the p-type surface conductivity after ND coating (similar to 10(13) carriers/cm(2), similar to 27 cm(2)/V s). In response to pH changes, the device showed an improved response to the as-hydrogenated sensor, from 19 mV/pH to a maximum of 37 mV/pH. Configured in resistor mode, exposure to 2,4-dinitrotoluene vapor gave rise to sensitive detection, while the uncoated H-terminated device exhibited reaction instability. The mechanisms behind these observations are discussed. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3518060]
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