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Publication Detail
Synthesis, AACVD and X-ray crystallographic structures of group 13 monoalkoxometallanes
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Knapp CE, Pemberton L, Carmalt CJ, Pugh D, McMillan PF, Barnett SA, Tocher DA
  • Publisher:
    TAYLOR & FRANCIS LTD
  • Publication date:
    2010
  • Pagination:
    31, 40
  • Journal:
    MAIN GROUP CHEM
  • Volume:
    9
  • Issue:
    1-2
  • Print ISSN:
    1024-1221
  • Language:
    EN
  • Keywords:
    Gallium alkoxide, indium alkoxide, synthesis, CVD, CHEMICAL-VAPOR-DEPOSITION, OXIDE THIN-FILMS, DONOR FUNCTIONALIZED ALCOHOLS, ALKOXIDE COMPLEXES, GALLIUM, INDIUM, PRECURSORS, SESQUIALKOXIDES, ORGANOGALLIUM, ALUMINUM
  • Addresses:
    Carmalt, CJ
    UCL
    Dept Chem
    London
    England
Abstract
The group 13 monoalkoxometallanes [Me2Ga(OC(CH3)(2)CH2OMe)](2) (1) and [Me2In(OCH(CH3)CH2OMe)](2) (2), incorporating donor functionalised alkoxides, were synthesised from the reaction of GaMe3 or InMe3 with ROH (R = C(CH3)(2)CH2OMe (1); R = CH(CH3)CH2OMe (2)) in toluene. X-ray crystallography showed that both compounds adopt dimeric structures with a planar M2O2 ring, and each group 13 atom is coordinated in a distorted trigonal bipyramidal geometry. The AACVD reaction of GaMe3 and ROH (R = C(CH3)(2)CH2OMe, CH2CH2OMe, CH2CH2NMe2) resulted in the formation of thin films of Ga2O3 on glass substrates at 450 degrees C. The gallium oxide films were analyzed by scanning electron microscopy, X-ray powder diffraction, energy dispersive analysis of X-rays, wavelength dispersive analysis of X-rays and X-ray photoelectron spectroscopy. This CVD technique offers a rapid, convenient route to Ga2O3, which involves the in situ formation of dimethylgallium alkoxides, of the type [Me2Ga(mu-OR)](2) similar to compound 1.
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