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Publication Detail
Nanodiamond-gated silicon ion-sensitive field effect transistor
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Ahmad RK, Parada AC, Jackman RB
  • Publisher:
    AMER INST PHYSICS
  • Publication date:
    11/04/2011
  • Journal:
    APPL PHYS LETT
  • Volume:
    98
  • Issue:
    15
  • Print ISSN:
    0003-6951
  • Language:
    EN
  • Keywords:
    HYDROGENATED DIAMOND, TERMINATED DIAMOND, SENSORS, EXPLOSIVES, SURFACES
  • Addresses:
    Jackman, RB
    UCL
    Dept Elect & Elect Engn
    London
    WC1H 0AH
    England

    UCL
    London Ctr Nanotechnol
    London
    WC1H 0AH
    England
Abstract
Diamond has excellent surface chemical properties for sensing applications but active device fabrication technology is immature compared to silicon. A method for attaching nanodiamonds to commercially available silicon ion-sensitive field effect transistors is demonstrated, leading to a nanodiamond-silicon hybrid sensor. In response to pH changes, the hybrid device showed a similar response to the Si sensor, at 55 mV/pH, near the Nernst limit. Complete immersion in liquid containing different molarities of explosive precursors such NaNO2 and NaClO3, and exposure to 2,4 dinitrotoluene vapor, an analog for the explosive trinitrotoluene, gave rise to sensitive detection, while the Si ion sensitive field effect transistor device remained insensitive. (C) 2011 American Institute of Physics. [do:10.1063/1.3568887]
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