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Publication Detail
The effect of level mixing in Er-doped Si
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Journal Article
  • Authors:
    Federighi M, Kenyon AJ, Chryssou CE, Pitt CW
  • Publication date:
    01/12/1999
  • Pagination:
    251, 255
  • Journal:
    Materials Research Society Symposium - Proceedings
  • Volume:
    560
  • Status:
    Published
  • Print ISSN:
    0272-9172
Abstract
We have studied the effect of level mixing on the optical properties of Er in Si by calculating the radiative cross sections of Er in Si under external pressure, and the possibility of enhancing in this way both the luminescence and the excitation efficiency. © 1999 Materials Research Society.
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