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Publication Detail
Thermal Stability of Corrugated Epitaxial Graphene Grown on Re(0001)
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Miniussi E, Pozzo M, Baraldi A, Vesselli E, Zhan RR, Comelli G, Mentes TO, Nino MA, Locatelli A, Lizzit S, Alfe D
  • Publisher:
    AMER PHYSICAL SOC
  • Publication date:
    25/05/2011
  • Journal:
    PHYS REV LETT
  • Volume:
    106
  • Issue:
    21
  • Print ISSN:
    0031-9007
  • Language:
    EN
  • Keywords:
    RIPPLES
  • Addresses:
    Miniussi, E
    Univ Trieste
    Dept Phys
    I-34127
    Trieste
    Italy

    Univ Trieste
    CENMAT
    I-34127
    Trieste
    Italy

    Lab TASC IOM CNR
    I-34149
    Trieste
    Italy

    UCL
    London Ctr Nanotechnol
    London
    WC1E 6BT
    England

    Inst Madrileno Estudios Avanzados Nanociencia IMD
    Madrid
    28049
    Spain

    DEMOCRITOS Natl Simulat Ctr
    IOM CNR
    I-34100
    Trieste
    Italy
Abstract
We report on a novel approach to determine the relationship between the corrugation and the thermal stability of epitaxial graphene grown on a strongly interacting substrate. According to our density functional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a buckling of 1.6 angstrom, yielding a simulated C 1s core level spectrum which is in excellent agreement with the experimental one. We found that corrugation is closely knit with the thermal stability of the C network: C-C bond breaking is favored in the strongly buckled regions of the moire cell, though it requires the presence of diffusing graphene layer vacancies.
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