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Publication Detail
Theoretical modeling of the electronic structure and exchange interactions in a Cu(II)Pc one-dimensional chain
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Wu W, Fisher AJ, Harrison NM
  • Publisher:
    AMER PHYSICAL SOC
  • Publication date:
    18/07/2011
  • Journal:
    PHYS REV B
  • Volume:
    84
  • Issue:
    2
  • Print ISSN:
    1098-0121
  • Language:
    EN
  • Keywords:
    DENSITY-FUNCTIONAL THEORY, COPPER PHTHALOCYANINE, MAGNETIC SEMICONDUCTOR, 1ST-PRINCIPLES, INSULATORS
  • Addresses:
    Wu, W
    Univ London Imperial Coll Sci Technol & Med
    Dept Chem
    London
    SW7 2AZ
    England

    Univ London Imperial Coll Sci Technol & Med
    London Ctr Nanotechnol
    London
    SW7 2AZ
    England

    UCL
    London Ctr Nanotechnol
    London
    WC1E 6BT
    England
Abstract
We calculate the electronic structure and exchange interactions in a copper(II)phthalocyanine [Cu(II)Pc] crystal as a one-dimensional molecular chain using hybrid exchange density functional theory (DFT). In addition, the intermolecular exchange interactions are also calculated in a molecular dimer using Green's function perturbation theory (GFPT) to illustrate the underlying physics. We find that the exchange interactions depend strongly on the stacking angle, but weakly on the sliding angle (defined in the text). The hybrid DFT calculations also provide an insight into the electronic structure of the Cu(II)Pc molecular chain and demonstrate that on-site electron correlations have a significant effect on the nature of the ground state, the band gap, and magnetic excitations. The exchange interactions predicted by our DFT calculations and GFPT calculations agree qualitatively with the recent experimental results on newly found eta-Cu(II) Pc and the previous results for the alpha and beta phases. This work provides a reliable theoretical basis for the further application of Cu(II) Pc to molecular spintronics and organic-based quantum information processing.
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