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Publication Detail
Extending the inelastic thermal spike model for semiconductors and insulators
  • Publication Type:
    Conference
  • Authors:
    Daraszewicz SL, Duffy DM
  • Publisher:
    ELSEVIER SCIENCE BV
  • Publication date:
    15/07/2011
  • Pagination:
    1646, 1649
  • Published proceedings:
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Volume:
    269
  • Issue:
    14
  • Name of conference:
    10th International Conference on Computer Simulation of Radiation Effects in Solids
  • Conference place:
    Jagiellonian Univ, Krakow, POLAND
  • Conference start date:
    19/07/2010
  • Conference finish date:
    23/07/2010
  • Print ISSN:
    0168-583X
  • Language:
    EN
  • Keywords:
    Swift heavy ions, Silicon, Inelastic thermal spike, Radiation damage, SWIFT HEAVY-IONS, HIGH ELECTRONIC EXCITATIONS, CROSS-SECTION, PURE METALS, IRRADIATION, DAMAGE, TRACKS, SENSITIVITY, SIMULATION, EMISSION
  • Addresses:
    Duffy, DM
    UCL
    Dept Phys & Astron
    London
    WC1E 6BT
    England

    UCL
    London Ctr Nanotechnol
    London
    WC1E 6BT
    England
Abstract
The inelastic thermal spike framework was extended to incorporate an additional balance equation for the carrier density. Temporal and spatial evolution of carrier density, electronic and lattice temperatures were solved for silicon using a finite difference method. Calculated track radii for a range of electronic stopping powers are presented. The model allows us to fit the electron-phonon coupling to experimental data of amorphised track radii. We compare the methodology of this framework to an earlier inelastic thermal spike model, which is based on the two-temperature model for non-equilibrium processes in metals, and discuss its contribution to the understanding of microscopic processes following a swift ion irradiation event in band gap materials. (C) 2010 Elsevier B.V. All rights reserved.
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