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Publication Detail
Endotaxial Si nanolines in Si(001):H
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Bianco F, Owen JHG, Koster SA, Mazur D, Renner C, Bowler DR
  • Publisher:
    AMER PHYSICAL SOC
  • Publication date:
    29/07/2011
  • Journal:
    PHYS REV B
  • Volume:
    84
  • Issue:
    3
  • Print ISSN:
    1098-0121
  • Language:
    EN
  • Keywords:
    MANY-FERMION SYSTEM, SI(100) SURFACE, ONE-DIMENSION, NANOSTRUCTURES, NANOWIRES, GROWTH
  • Addresses:
    Bianco, F
    Univ Geneva
    Dept Condensed Matter Phys
    NCCR MaNEP
    CH-1211
    Geneva
    4
    Switzerland

    London Ctr Nanotechnol
    London
    WC1H 0AH
    England
Abstract
We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.
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