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Publication Detail
The use of combinatorial aerosol-assisted chemical vapour deposition for the formation of gallium-indium-oxide thin films
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Knapp CE, Kafizas A, Parkin IP, Carmalt CJ
  • Publisher:
    ROYAL SOC CHEMISTRY
  • Publication date:
    2011
  • Pagination:
    12644, 12649
  • Journal:
    J MATER CHEM
  • Volume:
    21
  • Issue:
    34
  • Print ISSN:
    0959-9428
  • Language:
    EN
  • Keywords:
    DONOR FUNCTIONALIZED ALCOHOLS, TRANSPARENT CONDUCTING OXIDE, COMPOSITIONAL SPREADS, CVD, TITANIUM, TIN, REFINEMENT, HAFNIUM, GAINO3, IN2O3
  • Addresses:
    Carmalt, CJ
    UCL
    Dept Chem
    Mat Chem Ctr
    London
    WC1H 0AJ
    England
Abstract
We describe a novel combinatorial aerosol-assisted chemical vapour deposition (cAACVD) technique to deposit gallium-doped indium oxide thin films. The oxide films, GaxIn2-xO3 (where x = 0.4-1.6) were deposited within composition graduated films from the aerosol-assisted CVD of GaMe3, InMe3 and HOCH2CH2OMe. Amorphous Ga2O3 was deposited closest to the inlet from the bubbler containing GaMe3/HOCH2CH2OMe whereas crystalline In2O3 was grown on the substrate closest to the inlet from the bubbler containing InMe3/HOCH2CH2OMe. A range of gallium-indium-oxide compositions, GaxIn(2-x)O(3), were deposited on the substrate in the region between the two inlets. This allowed for a systematic investigation on the effect of doping on gallium and indium oxide and a direct relationship between composition and conductivity of the films was observed. The films were characterised via X-ray diffraction (XRD) mapping, energy dispersive X-ray analysis (EDXA), scanning electron microscopy (SEM) and conductivity measurements. The lattice parameters for crystalline films are sensitive to composition and were determined to range from a = 10.091 to 10.057 angstrom. This is to our knowledge the first time that a combinatorial aerosol-assisted CVD method has been described. This provides a rapid route to investigate the effect of a dopant on the functional properties of a wide range of materials. Moreover, since it is a solution-based technique, films with a range of compositions could be deposited even if volatile precursors are not available.
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