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Publication Detail
Low-temperature transport in ultra-thin tungsten films grown by focused-ion-beam deposition
  • Publication Type:
    Conference
  • Authors:
    Chiatti O, Warburton PA
  • Publisher:
    IOP PUBLISHING LTD
  • Publication date:
    2011
  • Published proceedings:
    CONDENSED MATTER AND MATERIALS PHYSICS CONFERENCE (CMMP10)
  • Volume:
    286
  • Editors:
    Inglesfield JE
  • Name of conference:
    Conference on Condensed Matter and Materials Physics (CMMP10)
  • Conference place:
    Univ Warwick, Coventry, ENGLAND
  • Conference start date:
    14/12/2010
  • Conference finish date:
    16/12/2010
  • Print ISSN:
    1742-6588
  • Language:
    EN
  • Addresses:
    Chiatti, O
    UCL
    London Ctr Nanotechnol
    London
    WC1H 0AH
    England
Abstract
We have fabricated tungsten-containing films by focused-ion-beam(FIB)-induced chemical vapour deposition. By using ion-beam doses below 50 pC/mu m(2) on a substrate of amorphous silicon, we have grown continuous films with thickness below 20 nm. The low-temperature electron transport properties were investigated by measuring current-voltage characteristics for temperatures down to 400 mK and in magnetic field sup to 3T. FIB-deposited tungsten films are known to have an enhanced transition temperature compared to bulk tungsten, and films with thickness down to 50 nm have been investigated previously. The films in this work are closer to the limit of two-dimensional system and are superconducting below 1 K. Magnetoresistance measurements yield upper critical fields of the order of 1T, and the resulting coherence length is smaller than the film thickness.
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