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Publication Detail
Elastic relaxation in an ultrathin strained silicon-on-insulator structure
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Xiong G, Moutanabbir O, Huang XJ, Paknejad SA, Shi XW, Harder R, Reiche M, Robinson IK
  • Publisher:
    AMER INST PHYSICS
  • Publication date:
    12/09/2011
  • Journal:
    APPL PHYS LETT
  • Volume:
    99
  • Issue:
    11
  • Article number:
    114103
  • Print ISSN:
    0003-6951
  • Language:
    EN
  • Keywords:
    X-RAY-DIFFRACTION, NANOSCALE, MOBILITY, FILM, SI
  • Addresses:
    Xiong, G
    UCL
    London Ctr Nanotechnol
    London
    WC1H 0AH
    England
Abstract
Coherent x-ray diffraction was used to study the relaxation in single ultrathin strained silicon structures with nanoscale accuracy. The investigated structure was patterned from 20 nm thick strained silicon-on-insulator substrate with an initial biaxial tensile strain of 0.6%. Two-dimensional maps of the post-patterning relaxation were obtained for single 1 x 1 mu m(2) structures. We found that the relaxation is localized near the edges, which undergo a significant contraction due to the formation of free surfaces. The relaxation extent decreases exponentially towards the center with a decay length of 50 nm. Three-dimensional simulations confirmed that over-etching is needed to explain the relaxation behavior. (C) 2011 American Institute of Physics. [doi:10.1063/1.3637634]
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