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Publication Detail
Electronic structure of Si(110)-(16 x 2) studied by scanning tunneling spectroscopy and density functional theory
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Setvin M, Brazdova V, Bowler DR, Tomatsu K, Nakatsuji K, Komori F, Miki K
  • Publisher:
    AMER PHYSICAL SOC
  • Publication date:
    22/09/2011
  • Journal:
    PHYS REV B
  • Volume:
    84
  • Issue:
    11
  • Article number:
    115317
  • Print ISSN:
    1098-0121
  • Language:
    EN
  • Keywords:
    AUGMENTED-WAVE METHOD, AB-INITIO, SURFACE, MICROSCOPY, SEMICONDUCTOR
  • Addresses:
    Setvin, M
    Natl Inst Mat Sci
    Tsukuba
    Ibaraki
    3050044
    Japan

    Charles Univ Prague
    Dept Surface & Plasma Sci
    CZ-18000
    Prague
    8
    Czech Republic

    UCL
    Thomas Young Ctr
    London
    WC1E 6BT
    England

    Univ London Univ Coll
    Dept Phys & Astron
    London
    WC1E 6BT
    England
Abstract
The electronic structure of the Si(110)-(16 x 2) surface was studied by scanning tunneling microscopy at room temperature (RT) and at 78 K. A combination of point tunneling spectroscopy measurements and local density of states mappings reveal details of the electronic structure of the (16 x 2) reconstruction both in empty and occupied states. Point tunneling spectra show a small band gap indicating that Si(110)-(16 x 2) is a semiconductor. The pentagon, which is the main building block in the Si(110)-(16 x 2) surface, consists of at least four electronic states. The pentagon in empty states is created by the superposition of two states with different origins: a four-lobed pattern similar to that observed in filled states; and another state that causes splitting of one of the lobes. The 78 K data show that the band responsible for the four-lobed shape in filled states (located at -0.2 eV) splits further. We present a very simple structure, calculated by density functional theory, which partially explains the experimental data.
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