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Publication Detail
Titanium arsenide films from the atmospheric pressure chemical vapour deposition of tetrakisdimethylamidotitanium and tert-butylarsine
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Thomas T, Blackman CS, Parkin IP, Carmalt CJ
  • Publisher:
    ROYAL SOC CHEMISTRY
  • Publication date:
    2011
  • Pagination:
    10664, 10669
  • Journal:
    DALTON T
  • Volume:
    40
  • Issue:
    40
  • Print ISSN:
    1477-9226
  • Language:
    EN
  • Keywords:
    PHOSPHIDE THIN-FILMS, LOW-TEMPERATURE DEPOSITION, NITRIDE, DECOMPOSITION, CYCLOHEXYLPHOSPHINE, GROWTH, CVD, TERTIARYBUTYLARSINE, TETRACHLORIDE, PRECURSORS
  • Addresses:
    Carmalt, CJ
    UCL
    Mat Chem Ctr
    Dept Chem
    London
    WC1H OAJ
    England
Abstract
Thin films of titanium arsenide have been deposited from the atmospheric pressure chemical vapour deposition (APCVD) of [Ti(NMe2)(4)] and (BuAsH2)-Bu-t at substrate temperatures between 350-550 degrees C. Highly reflective, silver coloured films were obtained which showed borderline metallic-semiconductor resistivities. The titanium arsenide films were analyzed by scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX), powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The films showed variable titanium to arsenic ratios but at substrate temperatures of 500 and 550 degrees C films with a 1 : 1 ratio of Ti : As, consistent with the composition TiAs, were deposited. Powder XRD showed that all of the films were crystalline and consistent with the formation of TiAs. Both nitrogen and carbon contamination of the films were negligible.
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