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Publication Detail
A room temperature electrically pumped 1.3-μm InAs quantum dot laser monolithically grown on silicon substrates
We present a room-temperature 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm 2 and the emission wavelength was 1.302μm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs. © 2011 IEEE.
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