Institutional Research Information Service
UCL Logo
Please report any queries concerning the funding data grouped in the sections named "Externally Awarded" or "Internally Disbursed" (shown on the profile page) to your Research Finance Administrator. Your can find your Research Finance Administrator at https://www.ucl.ac.uk/finance/research/rs-contacts.php by entering your department
Please report any queries concerning the student data shown on the profile page to:

Email: portico-services@ucl.ac.uk

Help Desk: http://www.ucl.ac.uk/ras/portico/helpdesk
Publication Detail
Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Journal Article
  • Authors:
    Edgington R, Sato S, Ishiyama Y, Morris R, Jackman RB, Kawarada H
  • Publication date:
  • Journal:
    Journal of Applied Physics
  • Volume:
  • Issue:
  • Status:
  • Print ISSN:
A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2 ) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3 . © 2012 American Institute of Physics.
Publication data is maintained in RPS. Visit https://rps.ucl.ac.uk
 More search options
UCL Researchers
Dept of Electronic & Electrical Eng
University College London - Gower Street - London - WC1E 6BT Tel:+44 (0)20 7679 2000

© UCL 1999–2011

Search by