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Publication Detail
Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Journal Article
  • Authors:
    Edgington R, Sato S, Ishiyama Y, Morris R, Jackman RB, Kawarada H
  • Publication date:
  • Journal:
    Journal of Applied Physics
  • Volume:
  • Issue:
  • Print ISSN:
  • Language:
A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3. © 2012 American Institute of Physics.
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