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Publication Detail
High-speed photodiodes for InP-based photonic integrated circuits.
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Journal Article
  • Authors:
    Rouvalis E, Chtioui M, Tran M, Lelarge F, van Dijk F, Fice MJ, Renaud CC, Carpintero G, Seeds AJ
  • Publication date:
    09/04/2012
  • Pagination:
    9172, 9177
  • Journal:
    Opt Express
  • Volume:
    20
  • Issue:
    8
  • Status:
    Published
  • Country:
    United States
  • PII:
    231760
  • Language:
    eng
Abstract
We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).
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Dept of Electronic & Electrical Eng
Author
Dept of Electronic & Electrical Eng
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