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Publication Detail
170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Journal Article
  • Authors:
    Rouvalis E, Chtioui M, Van Dijk F, Lelarge F, Fice MJ, Renaud CC, Carpintero G, Seeds AJ
  • Publication date:
    27/08/2012
  • Pagination:
    20090, 20095
  • Journal:
    Optics Express
  • Volume:
    20
  • Issue:
    18
  • Status:
    Published
Abstract
We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications. © 2012 Optical Society of America.
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Dept of Electronic & Electrical Eng
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