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Publication Detail
Resonant Scattering in Delta-doped Heterostructures
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Article
  • Authors:
    Robinson I, Nilsson PO, Debowska-Nilsson D, Ni WX, Hansson GV
  • Publication date:
    2001
  • Pagination:
    2913, 2916
  • Journal:
    Applied Physics Letters
  • Volume:
    79
  • Print ISSN:
    0003-6951
  • Keywords:
    semiconductor, heterostructure
  • Notes:
    Important development for looking at segregation profiles in layered semiconductors
Abstract
We demonstrate the utility of resonant x-ray scattering in probing the structure of doping layers at a heterostructure interface. The positions of germanium layers inserted at the interface of a silicon epitaxial film assert a strong influence of the phase of the scattered intensity along the crystal truncation rods. The phase of the scattering, and hence the internal structure of the layers, can be determined conveniently by analyzing its energy dependence in the vicinity of the Germanium absorption edge at 11.103 keV.
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