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Publication Detail
Tantalum and titanium doped In O thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties
  • Publication Type:
    Journal article
  • Authors:
    Bloor LG, Manzi J, Binions R, Parkin IP, Pugh D, Afonja A, Blackman CS, Sathasivam S, Carmalt CJ
  • Publication date:
    14/08/2012
  • Pagination:
    2864, 2871
  • Journal:
    Chemistry of Materials
  • Volume:
    24
  • Issue:
    15
  • Print ISSN:
    0897-4756
Abstract
In O and In O :M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In O :M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In O :Ta) thin films showed a superior response, compared to In O , to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO . Considerable selectivity to ethanol was observed; the greatest gas response (R/R ) was 16.95 to 100 ppm ethanol. © 2012 American Chemical Society.
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