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Publication Detail
Tantalum and titanium doped In 2O 3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties
  • Publication Type:
    Journal article
  • Publication Sub Type:
    Journal Article
  • Authors:
    Bloor LG, Manzi J, Binions R, Parkin IP, Pugh D, Afonja A, Blackman CS, Sathasivam S, Carmalt CJ
  • Publication date:
    14/08/2012
  • Pagination:
    2864, 2871
  • Journal:
    Chemistry of Materials
  • Volume:
    24
  • Issue:
    15
  • Print ISSN:
    0897-4756
  • Language:
    eng
  • Keywords:
    CVD, gas sensing, indium oxide, tantalum doping, titanium doping
Abstract
In 2O 3 and In 2O 3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In 2O 3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In 2O 3:Ta) thin films showed a superior response, compared to In 2O 3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO 2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R 0) was 16.95 to 100 ppm ethanol. © 2012 American Chemical Society.
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