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Publication Detail
Epitaxy of nanocrystalline silicon carbide on Si(111) at room temperature
  • Publication Type:
    Journal article
  • Authors:
    Verucchi R, Aversa L, Nardi MV, Taioli S, A Beccara S, Alfè D, Nasi L, Rossi F, Salviati G, Iannotta S
  • Publication date:
    24/10/2012
  • Pagination:
    17400, 17403
  • Journal:
    Journal of the American Chemical Society
  • Volume:
    134
  • Issue:
    42
  • Print ISSN:
    0002-7863
Abstract
Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C) supersonic beam. Chemical processes, such as C rupture, are activated at a precursor kinetic energy of 30-35 eV, far from thermodynamic equilibrium. This result paves the way for SiC synthesis on polymers or plastics that cannot withstand high temperatures. © 2012 American Chemical Society.
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