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Publication Detail
InAs/GaAs quantum-dot lasers monolithically grown on Si substrate
Abstract
We present the studies on the development of InAs/GaAs quantum-dot lasers monolithically grown on Si for Si photonics. Room-temperature lasing near 1.3 μm has been demonstrated for the devices on Si and Ge substrates. © 2012 IEEE.
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Dept of Electronic & Electrical Eng
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