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Publication Detail
Control of embedded Si nanocrystals in SiO2by rapid thermal annealing and enhanced photoluminescence characterization
It is well known that Si implantation into SiO 2 and subsequent high temperature annealing induce the formation of embedded luminescent Si nanocrystals. In this work, potentialities of rapid thermal annealing to enhance the photoluminescence have been investigated. Ion implantation was used to synthesize specimens of SiO 2 containing supersaturated Si with different concentrations. The implanted samples were subsequently annealed at 1050 °C for several hours using a conventional tube furnace. Some of the samples were rapidly thermal annealed at 1050 °C or 1100 °C for only 5 min with different rising ratio from 10 to 50 °C/s. Photoluminescence spectra were measured at various stages of annealing processes. The luminescence intensity is strongly enhanced with a rapid thermal annealing before conventional furnace annealing. Moreover, the luminescence peak energy is found to be dependent, but a little, on thermal history of specimens. The luminescence intensity is known to be determined by the number of Si nanocrystals. In forming the Si nanocrystals in a SiO 2 matrix by high temperature annealing, decomposition, diffusion, nucleation, growth and crystallization processes are clearly important. The experimental results indicate that the rapid thermal annealing is effective for the initial process in forming Si nanocrystals, especially for low dose specimens. Based on the results, we discuss about the mechanism of an enhancement of the photoluminescence from embedded Si nanocrystals with rapid thermal annealing. © 2007 Elsevier B.V. All rights reserved.
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