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Publication Detail
Long-wavelength III-V quantum-dot lasers monolithically grown on Si substrates
Although great effort have been devoted for Si-based light generation and modulation technologies since the 1980s, monolithic growth of electrically pumped laser on Si remains the 'holy grail' for Si photonics. In this paper, room temperature lasing near the telecom wavelength of 1300 nm has been demonstrated at room temperature with low threshold current densities for InAs/GaAs quantum-dot lasers grown on both Si and Ge substrates. © 2013 IEEE.
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