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Publication Detail
InAs/GaAs quantum dot solar cell with an AlAs cap layer
  • Publication Type:
    Journal article
  • Publication Sub Type:
    article
  • Authors:
    Tutu FK, Lam P, Wu J, Miyashita N, Okada Y, Lee K-H, Ekins-Daukes NJ, Wilson J, Liu H
  • Publication date:
    22/04/2013
  • Journal:
    APPLIED PHYSICS LETTERS
  • Volume:
    102
  • Article number:
    16
  • Print ISSN:
    0003-6951
  • Notes:
    article-number: 163907 researcherid-numbers: Liu, Huiyun/H-5439-2011 unique-id: ISI:000318269300108
Abstract
We report the effects of the deposition of an AlAs cap layer (CL) over InAs quantum dots (QDs) on the performance of QD solar cells (QDSCs). The growth of AlAs CL over InAs QDs led to the elimination of the wetting layer absorption and hence the enhancement of the open-current voltage, V-oc, of a 20-layer InAs/GaAs QDSC from 0.69 V to 0.79 V. Despite a slight reduction in short-circuit current, J(sc), for the QDSC with AlAs CL, the enhancement of the V-oc is enough to ensure that its efficiency is higher than the QDSC without AlAs CL. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4803459]
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Author
Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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