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Publication Detail
Quantum conductance in silicon oxide resistive memory devices
Abstract
Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which constrain the motion of electrons, leading to the quantisation of device conductance into multiples of the fundamental unit of conductance, G 0. Such quantum effects appear when the constriction diameter approaches the Fermi wavelength of the electron in the medium - typically several nanometres. Here we find that the conductance of silicon-rich silica (SiO x) resistive switches is quantised in half-integer multiples of G 0. In contrast to other resistive switching systems this quantisation is intrinsic to SiO x, and is not due to drift of metallic ions. Half-integer quantisation is explained in terms of the filament structure and formation mechanism, which allows us to distinguish between systems that exhibit integer and half-integer quantisation.
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Dept of Electronic & Electrical Eng
University College London - Gower Street - London - WC1E 6BT Tel:+44 (0)20 7679 2000

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