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Publication Detail
Electrically pumped continuous-wave 1.3-mu m InAs/GaAs quantum dot lasers monolithically grown on Si substrates
  • Publication Type:
    Journal article
  • Publication Sub Type:
    article
  • Authors:
    Wu J, Lee A, Jiang Q, Tang M, Seeds AJ, Liu H
  • Publication date:
    04/2014
  • Pagination:
    20, 24
  • Journal:
    IET OPTOELECTRONICS
  • Volume:
    8
  • Article number:
    2, SI
  • Print ISSN:
    1751-8768
  • Notes:
    researcherid-numbers: Liu, Huiyun/H-5439-2011 Tang, Mingchu/K-1951-2015 orcid-numbers: Tang, Mingchu/0000-0001-6626-3389 unique-id: ISI:000333759400002
Abstract
Continuous-wave (CW) operation of InAs/GaAs quantum dot (QD) lasers monolithically grown on Si substrates by molecular beam epitaxy is presented. The peak lasing wavelength of 1278 nm is accompanied by a low threshold current density of 458 A/cm(2) at 8 degrees C using a GaAs buffer layer directly grown on the Si substrates. The improvement in laser performance is due to improved crystal quality of the GaAs buffer layer. The demonstration of a CW QD laser also benefits from using top-top contacts, which route the current through the laser active layer to avoid the high-density defects near the Si/GaAs interface. These results demonstrate the growing potential of the monolithically integrated III-V QD lasers on the Si substrates.
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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Dept of Electronic & Electrical Eng
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