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Publication Detail
Activation energy for surface diffusion in GaInNAs quantum wells
  • Publication Type:
    Conference
  • Authors:
    Herrera M, Gonzalez D, Lozano JG, Hopkinson M, Gutierrez M, Navaretti P, Liu HY, Garcia R
  • Publisher:
    Springer Verlag
  • Publication date:
    2005
  • Place of publication:
    Berlin / Heidelberg, Germany
  • Pagination:
    279, 282
  • Published proceedings:
    Microscopy of Semiconducting Materials: Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK
  • Volume:
    107
  • Series:
    Springer Proceedings in Physics
  • Editors:
    Cullis AG,Hutchison JL
  • ISBN-13:
    9783540319146
  • Status:
    Published
  • Language:
    English
  • Keywords:
    SPINODAL DECOMPOSITION; GROWTH; TEMPERATURE; GAAS
Abstract
The analysis by transmission electron microscopy of GaInNAs/GaAs(001) quantum wells grown at different temperatures in the range 375–420 °C is reported. Our results with the 220BF reflection have shown the existence of periodic strain contrasts in all the wells, associated with composition fluctuations in the alloy. These contrasts are more pronounced with increasing growth temperature, revealing a kinetic limitation for the formation of the phase separation. With the theoretical equation proposed by Cahn and the amplitude of the intensity profiles taken from 220BF micrographs, the activation energy for surface diffusion in GaInNAs is calculated.
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